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Leakage Currents in FinFETs
| Content Provider | Scilit |
|---|---|
| Author | Saha, Samar K. |
| Copyright Year | 2020 |
| Description | In this chapter, the physical mechanisms and mathematical formulations of different components of leakage currents in fin field-effect transistor (FinFET) devices during operation in VLSI circuits and systems are presented. These leakage currents include the subthreshold leakage currents due to the close proximity of the drain to the source, the gate-induced drain and source leakage currents due to band-to-band tunneling, source-drain pn-junction leakage currents, and gate tunneling currents. Book Name: FinFET Devices for VLSI Circuits and Systems |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2018-0-77218-3&isbn=9780429504839&doi=10.1201/9780429504839-7&format=pdf |
| Ending Page | 230 |
| Page Count | 16 |
| Starting Page | 215 |
| DOI | 10.1201/9780429504839-7 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-07-15 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Finfet Devices for Vlsi Circuits and Systems Hardware and Architecturee Transistor Tunneling Circuits Finfet Leakage Currents Subthreshold Mathematical |
| Content Type | Text |
| Resource Type | Chapter |
