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A TEM investigation of NiAuGe ohmic contacts to GaAs
| Content Provider | Scilit |
|---|---|
| Author | Zhang, Xiaomei Staton-Bevan, Anne E. |
| Copyright Year | 2021 |
| Description | This paper reports a microstructural investigation of thermally evaporated Ni (50nm) Au 27 at% Ge (150nm) ohmic contacts on (100) semi-insulating GaAs substrates. Using plan view and cross-sectional TEM, it has been established that the contacts have “double-layer” configuration. The microstructures of both layers consist of particles of a Ni $As_{X}$ $Ge_{1-X}$. phase embedded in a complex Au- and Ga-rich matrix. The Ni $As_{X}$ $Ge_{1-X}$ phase has an ordered superlattice based on the hexagonal NiAs (B8) structure. Evidence for different formation mechanisms of this phase in the upper and lower contact layers is presented. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 308 |
| Page Count | 6 |
| Starting Page | 303 |
| DOI | 10.1201/9781003069621-49 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-31 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Ohmic Gaas Tem Microstructures Nias Thermally Niauge Configuration |
| Content Type | Text |
| Resource Type | Chapter |
