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Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation
| Content Provider | Scilit |
|---|---|
| Author | Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Izhnin, I. I. |
| Copyright Year | 2017 |
| Description | Journal: Journal of Physics: Conference Series The effect of ion implantation of boron ions with an energy of 100 keV and a dose of $(1-6)×10^{15}$ $cm^{-2}$ in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was investigated. The changes of the conductivity type in the near-surface layer of HgCdTe after ion implantation of boron and etching by ions of argon were detected. The concentrations of the major charge carriers in the near-surface layer of the epitaxial films after ion implantation and after ion etching were close to $5.88×10^{16}$ $cm^{-3}$ and $2.47×10^{17}$ $cm^{-3}$, respectively. |
| Related Links | http://iopscience.iop.org/article/10.1088/1742-6596/830/1/012081/pdf |
| ISSN | 17426588 |
| e-ISSN | 17426596 |
| DOI | 10.1088/1742-6596/830/1/012081 |
| Journal | Journal of Physics: Conference Series |
| Volume Number | 830 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-05-04 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Conference Series Applied Physics Surface Layer Ion Implantation Mbe Hgcdte Etching By Ions Boron Ions Gap Mbe Graded Gap |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
