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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Zhai, Guangmei Jia, Wei Xu, Bingshe Shang, Lin Ma, Shufang Wang, Haotian Jia, Zhigang Liang, Jian Li, Xuemin |
| Copyright Year | 2016 |
| Abstract | Three-dimensional (3D) GaN nanostructures with well-aligned nano-cones have been prepared via a laser interference lithography + inductively coupled plasma (ICP) etching method. The effect of radio-frequency (RF) power and KOH solution etching on morphologies and optical properties of the GaN nano-cones has been studied by scanning electron microscopy, energy dispersive spectroscopy, room-temperature and low-temperature photoluminescence (PL) measurements. Our results show that the sidewall obliquity of GaN nano-cones increases from 63° to 80° with the increase of RF power from 60 W to 120 W, while their height and PL intensity peak at the RF power of 80 W. At 10 K, the excitonic interband ΓV9–ΓC7 and ΓV7 (upper band)–ΓC7 transitions were clearly observed for the GaN nano-cones, which were found to be 3.487 eV and 3.493 eV, respectively. After etching with KOH solution the nano-cones' surface was obviously roughened and their PL intensity increased by around 60%, although their internal quantum efficiency determined by low-temperature PL measurement was only increased by 6%. The enhanced PL intensity could be mainly ascribed to the improved light extraction efficiency and/or light absorption efficiency. It is expected that the 3D GaN nanostructures prepared in the work can offer a new growth template candidate for the fabrication of GaN based nanoLEDs. |
| Starting Page | 43272 |
| Ending Page | 43277 |
| Page Count | 6 |
| File Format | HTM / HTML PDF |
| ISSN | 20462069 |
| Volume Number | 6 |
| Issue Number | 49 |
| Journal | RSC Advances |
| DOI | 10.1039/c6ra01280a |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | Chemical milling Spectroscopy Quantum Inductively coupled plasma KOH Laser Interference lithography Photoluminescence Electronvolt Gallium nitride Scanning electron microscope Three-dimensional space |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Chemical Engineering |
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