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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Bi, Weibin Wang, Shu Zhang, Xiufu Zhang, Jianghua Wang, Lanying |
| Copyright Year | 2015 |
| Abstract | Three kinds of new double D–π–A mono-cyanines D1, D2 and D3 were synthesized for the surface modification of monocrystalline silicon to prepare near infrared silicon-based materials. There was a strong surface photovoltage response in the range of 900–1250 nm compared with silicon materials when double D–π–A mono-cyanines were bound on the monocrystalline silicon material surface. To explore the effect of the double D–π–A mono-cyanines on the light absorption characteristics of silicon materials, the absorption properties, films on monocrystalline silicon surfaces and the surface photovoltage response of three double D–π–A mono-cyanines were investigated. The results demonstrated that the order of the intensity of the surface photovoltage response was Si/D3 > Si/D2 > Si/D1, and no absorption properties of the silicon materials in the near infrared region were improved, yielding near infrared silicon-based materials. |
| Starting Page | 64626 |
| Ending Page | 64632 |
| Page Count | 7 |
| File Format | HTM / HTML PDF |
| ISSN | 20462069 |
| Volume Number | 5 |
| Issue Number | 79 |
| Journal | RSC Advances |
| DOI | 10.1039/c5ra08759g |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | Infrared Surface photovoltage Monocrystalline silicon |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Chemical Engineering |
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