NDLI: Optical emission spectroscopy diagnostic and thermodynamic analysis of thermal plasma enhanced nanocrystalline silicon CVD process

Content Provider	Royal Society of Chemistry (RSC)
Author	Cheng, Yi Cao, Tengfei Lu, Wei Yan, Binhang Zhang, Haibao
Copyright Year	2014
Abstract	Nanocrystalline silicon is a promising alternative for the conventional crystalline silicon materials in the photovoltaic industry because of its better photostability and easy fabrication. However, the low deposition rates of conventional nanocrystalline silicon fabrication processes have hampered its application in industry. Thermal plasma has been used to successfully realize the high rate deposition of nanocrystalline silicon in this work. Optical emission spectroscopy (OES) diagnostic and thermodynamic equilibrium calculation are carried out to better understand the mechanism of deposition reactions and the effect of SiCl4 input rate on the nanocrystalline silicon deposition rate and product properties. Emission lines of atomic silicon, atomic hydrogen and atomic argon are observed. The results show that the amount of silicon related species in the gas phase is the main factor affecting the deposition process, which has a linear relationship with nanocrystalline silicon deposition rate, grain size and crystalline fraction at the high H2 dilution ratio of the deposition system.
Starting Page	15131
Ending Page	15137
Page Count	7
File Format	HTM / HTML PDF
ISSN	20462069
Volume Number	4
Issue Number	29
Journal	RSC Advances
DOI	10.1039/c4ra01306a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Solar cell Absorption spectroscopy Nanocrystalline silicon Crystalline silicon Hydrogen Dilution ratio OES Argon Thermodynamic equilibrium Blood plasma
Content Type	Text
Resource Type	Article
Subject	Chemistry Chemical Engineering

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