NDLI: Ultraviolet and visible photoresponse properties of a ZnO/Si heterojunction at zero bias

Content Provider	Royal Society of Chemistry (RSC)
Author	Yan, Xiaoqin Shen, Yanwei Bai, Zhiming Zhang, Yue Lin, Pei Cui, Yan Chen, Xiang
Copyright Year	2013
Abstract	High quality ZnO microwires (MWs) with an electron concentration of 1.06 × 1017 cm−3 and carrier mobility of 1.68 cm2 V−1 s−1 were synthesized by a simple chemical vapor deposition (CVD) method. Based on a single n-type ZnO MW and a p-type Si film, an ultraviolet (UV)-visible photodetector (PD) has been constructed from the p–n junction, which showed a high rectification ratio larger than 103 at ±3 V and an ideal factor of about 2. Under zero bias, the PD exhibited high photosensitivities of ∼2 × 104 and ∼5 × 103 for UV (325 nm) and visible (514 nm) light, respectively, with a fast response time of about 7.4 ms. Also, detailed characterizations indicated that the short-circuit current (Isc) and the open-circuit voltage (Voc) showed square root and logarithmical dependences on the light intensity, respectively. The results support that n-ZnO MW/p-Si film PDs have potential application in the field of UV-visible detection and might be used as elements for powering low-energy micro/nanosystems.
Starting Page	17682
Ending Page	17688
Page Count	7
File Format	HTM / HTML PDF
ISSN	20462069
Volume Number	3
Issue Number	39
Journal	RSC Advances
DOI	10.1039/c3ra41713a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Extrinsic semiconductor P\u2013n junction Square root Ultraviolet Chemical vapor deposition Photodetector Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Chemistry Chemical Engineering

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