NDLI: Solution-processable graphene oxide as an insulator layer for metal–insulator

Content Provider	Royal Society of Chemistry (RSC)
Author	Lau, Shu Ping Ren, Jian Guo Zhou, Ye Liu, Chao Ping Zapien, Juan Antonio Chen, Zhen Hua Tang, Libin Tang, Yong Bing Hui, Yeung Yu
Copyright Year	2013
Abstract	Development of a high quality but low cost insulating layer is important for its application in photovoltaic cells. In this work, solution processable graphene oxide (GO) thin films were first utilized as an insulating layer to construct MIS silicon solar cells. The efficient water-soluble GO nano-sheets with controlled thickness produced a good contact with the hydrophilic silicon surfaces. The average open circuit voltage (VOC) of the GO incorporated MIS silicon solar cell was increased by 0.2 V, while their power conversion efficiency (PCE) was demonstrated as 88% higher than that of the corresponding Schottky solar cells. The improvement of the device performance in the GO-based MIS silicon solar cell is attributed to the increased built-in potential as well as the reduced interface defect, resulting in reduced carrier recombination. The ability to establish a low-cost and solution-processable insulating layer will open the door for wide application in photovoltaic and other optoelectronic devices.
Starting Page	17918
Ending Page	17923
Page Count	6
File Format	HTM / HTML PDF
ISSN	20462069
Volume Number	3
Issue Number	39
Journal	RSC Advances
DOI	10.1039/c3ra42967a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Solar cell Optoelectronics Open-circuit voltage Graphene Carrier generation and recombination Marine isotope stage Hydrophile Schottky diode
Content Type	Text
Resource Type	Article
Subject	Chemistry Chemical Engineering

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