NDLI: Electronic structures and transport properties of a MoS<sub>2</sub>–NbS<sub>2</sub> nanoribbon lateral heterostructure

Content Provider	Royal Society of Chemistry (RSC)
Author	Yang, Zhixiong Pan, Jiangling Wu, Nannan Hu, Mengli Liu, Qi Ouyang, Fangping
Copyright Year	2017
Abstract	Lateral heterostructures built from an armchair MoS2 nanoribbon (AMoS2NR) and an armchair NbS2 nanoribbon (ANbS2NR) were studied based on first-principles calculations and a non-equilibrium Green's function method. It is found that the work function of the AMoS2NR shows substantial oscillation with increasing nanoribbon width, which is different from the work functions of other kinds of nanoribbons. The AMoS2NR–ANbS2NR lateral heterostructure exhibits an anomalous transport gap that is much larger than the bandgap of the AMoS2NR. As a result, a field effect transistor with AMoS2NR as the channel and ANbS2NRs as electrodes has high on–off ratios of 106–107 and a tiny leakage current of the order of 10−8 μA. These results suggest that lateral metal–semiconductor heterostructures of transition metal dichalcogenides may have potential applications in nanodevices with low energy consumption.
Starting Page	1303
Ending Page	1310
Page Count	8
File Format	HTM / HTML PDF
ISSN	14639076
Volume Number	19
Issue Number	2
Journal	Physical Chemistry Chemical Physics
DOI	10.1039/c6cp07327a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Work function Field-effect transistor Transition metal Band gap Graphene nanoribbons Heterojunction
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Physical and Theoretical Chemistry

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