NDLI: Nanoscale lithography with visible light: optical nonlinear saturable absorption effect induced nanobump pattern structures

Content Provider	Royal Society of Chemistry (RSC)
Author	Ma, Xiaoqing Wei, Jingsong
Copyright Year	2011
Abstract	Industrial approaches to improve lithographic resolution usually rely upon short-wavelength laser or charged particles of even shorter wavelengths. However, nanoscale lithography with visible light is more effective for practical applications because of its low cost, easy operation, and so on. In the current work, a technical scheme for the optical nonlinear saturable absorption effect to induce nanobump pattern structures is proposed. The theoretical simulation indicates that the spot size can be squeezed and reduced to about 1/12 the original spot size using Si thin films as a nonlinear saturable absorption material, and GaN semiconductor diode as the laser source. The high-density digital versatile disk tester was used as the direct laser writing apparatus to verify the technical scheme. Nanostructures with a size of ∼80 nm were obtained. This size is ∼1/10 the spot size at optical diffraction limit.
Starting Page	1489
Ending Page	1492
Page Count	4
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	3
Issue Number	4
Journal	Nanoscale
DOI	10.1039/c0nr00888e
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Semiconductor DVD Diode Laser Multiphoton lithography Photolithography Diffraction-limited system Gallium nitride
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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Nanoscale lithography with visible light: optical nonlinear saturable absorption effect induced nanobump pattern structures