NDLI: Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon

Content Provider	Royal Society of Chemistry (RSC)
Author	Popoff, Richard T. W. Kavanagh, Karen L. Yu, Hua-Zhong
Copyright Year	2011
Abstract	Recent advances in creating rectifying gold\|monolayer\|silicon (Au–M–Si) junctions (namely, molecular silicon diodes) are reviewed. It is known that direct deposition of gold contacts onto molecular monolayers covalently bonded to silicon surfaces causes notable disruption to the junction structure, resulting in deteriorated performance and poor reproducibility that are unsuitable for practical applications. In the past few years, several new experimental approaches have been explored to minimize or eliminate such damage, including the “indirect” evaporation method and the pre-deposition of a protective “non-penetrating” metal. To enhance the interactions at the gold–monolayer interface, head-groups that allow bonding to gold are used to maintain the monolayer integrity. Construction of the device via flip-chip lamination and the modified polymer-assisted lift-off techniques also prohibits monolayer damage. Refining the fabrication and design techniques towards reliable molecular junctions is crucial if they are to be used in nanoelectronics for the purpose of miniaturization.
Starting Page	1434
Ending Page	1445
Page Count	12
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	3
Issue Number	4
Journal	Nanoscale
DOI	10.1039/c0nr00677g
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Flip chip Nanoelectronics
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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