NDLI: Ultrasensitive terahertz modulation by silicon-grown MoS<sub>2</sub> nanosheets

Content Provider	Royal Society of Chemistry (RSC)
Author	Chen, Sai Chang, Shengjiang Zhang, Kailiang He, Xiaotong Miao, Yinping Fan, Fei
Copyright Year	2016
Abstract	Two-dimensional (2D) materials play more and more important roles these days, due to their broad applications in many areas. Herein, we propose an optically-pumped terahertz (THz) modulator, based on Si-grown MoS2 nanosheets. The broadband modulation effect has been proved by THz time domain spectroscopy and numerical simulation. The modulation depth of this Si-grown MoS2 nanosheet can reach over 75% under the low pumping power of 0.24 W cm−2, much deeper than that of bare silicon. By theoretical models and simulation, it is proved that the broadband modulation effect can be described as a free carrier absorption for THz waves in the Drude form. Importantly, by a catalyst mechanism in the Si-grown MoS2, it is concluded that the MoS2–Si heterostructure enables the MoS2 to catalyze more carriers generated on the Si surface. This novel 2D material has a high effective modulation on THz waves under a low pumping power density, which affords it a promising potential in THz applications.
Starting Page	4713
Ending Page	4719
Page Count	7
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	8
Issue Number	8
Journal	Nanoscale
DOI	10.1039/c5nr08101g
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Spectroscopy Nanosheet Drude model Terahertz radiation Free carrier absorption Heterojunction
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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