NDLI: High-mobility anisotropic transport in few-layer γ-B<sub>28</sub> films

Please wait, while we are loading the content...

A resettable and reprogrammable biomolecular keypad lock with dual outputs based on glucose oxidase–Au nanoclusters–Prussian blue nanocomposite films on an electrode surface

Clustered localization of EGFRvIII in glioblastoma cells as detected by high precision localization microscopy

In situ integration of CoFe alloy nanoparticles with nitrogen-doped carbon nanotubes as advanced bifunctional cathode catalysts for Zn–air batteries

Near-infrared selective dynamic windows controlled by charge transfer impedance at the counter electrode

Bovine serum albumin coated nanoparticles for in vitro activated fluorescence

Resonant tunneling based graphene quantum dot memristors

Mechanical properties and current-carrying capacity of Al reinforced with graphene/BN nanoribbons: a computational study

High performance flexible strain sensor based on self-locked overlapping graphene sheets

Structure and properties of various hybrids fabricated by silk nanofibrils and nanohydroxyapatite

Beyond the staple motif: a new order at the thiolate–gold interface

High-mobility anisotropic transport in few-layer γ-B₂₈ films

Direction-resolved radiation from polarization-controlled surface plasmon modes on silver nanowire antennas

Inside back cover

Back cover

Nanoscale Vol - 8 Issue - 39

Nanoscale Vol - 8 Issue - 29

Nanoscale Vol - 8 Issue - 19

Nanoscale Vol - 8 Issue - 9

Nanoscale Vol - 8 Issue - 8

Nanoscale Vol - 8 Issue - 7

Nanoscale Vol - 8 Issue - 6

Nanoscale Vol - 8 Issue - 5

High-mobility anisotropic transport in few-layer γ-B₂₈ films

Content Provider	Royal Society of Chemistry (RSC)
Author	Chen, Changfeng Ma, Yandong Zhou, Liujiang Kou, Liangzhi Smith, Sean Gu, Yuantong Sun, Ziqi Du, Aijun
Copyright Year	2016
Abstract	Recent reports of successful synthesis of atomically thin boron films have raised great prospects of discovering novel electronic and transport properties in a new type of 2D materials. Here we show by first-principles calculations that monolayer and bilayer γ-B28 films are intrinsically metallic while the thicker films possess intriguing electronic states that exhibit moderate to large bandgaps in all the interior layers but are nearly gapless at the surface. Remarkably, these surface electronic states are tunable by strain, allowing the outermost layer to transition between a semimetal and a narrow-gap semiconductor. Moreover, these surface states almost exclusively occupy a wide energy range around the Fermi level, thus dominating the electronic transport in γ-B28 films. The dispersions of the surface electronic bands are direction sensitive, and with hole injection producing anisotropic and very high carrier mobility up to 104 cm2 V−1 s−1. Surprisingly, surface passivation can open a sizable bandgap, which offers an additional avenue for effective band engineering and explains the experimental observation of a large bandgap in the synthesized film. These results make few-layer γ-B28 films desirable candidate materials for catalysis and electronics applications.
Starting Page	20111
Ending Page	20117
Page Count	7
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	8
Issue Number	48
Journal	Nanoscale
DOI	10.1039/c6nr07271b
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Boron Semimetal Fermi level Anisotropy Narrow-gap semiconductor Band gap Passivation (chemistry)
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Semiconducting graphene: converting graphene from semimetal to semiconductor

Band gap opening of graphene by doping small boron nitride domains

Fermi Level Engineering of Passivation and Electron Transport Materials for p‐Type CuBi2O4 Employing a High‐Throughput Methodology

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material.

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Atomic layer deposited $Al_{2}O_{3}$ passivation layer for few-layer $WS_{2}$ field effect transistors

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor.

Tunable Lattice Constant and Band Gap of Single- and Few-Layer ZnO

Transport Properties of Few-Layer Graphene on Boron Nitride

High-mobility anisotropic transport in few-layer γ-B₂₈ films

Similar Documents

Semiconducting graphene: converting graphene from semimetal to semiconductor

Band gap opening of graphene by doping small boron nitride domains

Fermi Level Engineering of Passivation and Electron Transport Materials for p‐Type CuBi2O4 Employing a High‐Throughput Methodology

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material.

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Atomic layer deposited $Al_{2}O_{3}$ passivation layer for few-layer $WS_{2}$ field effect transistors

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor.

Tunable Lattice Constant and Band Gap of Single- and Few-Layer ZnO

Transport Properties of Few-Layer Graphene on Boron Nitride

High-mobility anisotropic transport in few-layer γ-B28 films

High-mobility anisotropic transport in few-layer γ-B₂₈ films