Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material.

Content Provider	Europe PMC
Author	Zakay, Noy Schlesinger, Adi Argaman, Uri Nguyen, Long Maman, Nitzan Koren, Bar Ozeri, Meital Makov, Guy Golan, Yuval Azulay, Doron
Copyright Year	2023
Abstract	We describe the unusual properties of γ-SnSe, anew orthorhombicbinary phase in the tin monoselenide system. This phase exhibits anultranarrow band gap under standard pressure and temperature conditions,leading to high conductivity under ambient conditions. Density functionalcalculations identified the similarity and difference between thenew γ-SnSe phase and the conventional α-SnSe based onthe electron localization function. Very good agreement was obtainedfor the band gap width between the band structure calculations andthe experiment, and insight provided for the mechanism of reductionin the band gap. The unique properties of this material may renderit useful for applications such as thermal imaging devices and solarcells.
ISSN	19448244
Journal	ACS Applied Materials & Interfaces
Volume Number	15
PubMed Central reference number	PMC10064319
Issue Number	12
PubMed reference number	36920349
e-ISSN	19448252
DOI	10.1021/acsami.2c22134
Language	English
Publisher	American Chemical Society
Publisher Date	2023-03-15
Access Restriction	Open
Rights License	Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). © 2023 American Chemical Society
Subject Keyword	SnSe thin films electrical properties ultranarrow band gap solution deposition
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Medicine Materials Science