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Epitaxial nucleation of CVD bilayer graphene on copper

Content Provider	Royal Society of Chemistry (RSC)
Author	Song, Meng Zhuang, Jianing Wang, Miao Cheng, Yu Xia, Yang Song, Yenan Yin, Shaoqian Maruyama, Shigeo Zhao, Pei Wang, Hongtao Zhang, Xuewei Ding, Feng Xiang, Rong
Copyright Year	2016
Abstract	Bilayer graphene (BLG) has emerged as a promising candidate for next-generation electronic applications, especially when it exists in the Bernal-stacked form, but its large-scale production remains a challenge. Here we present an experimental and first-principles calculation study of the epitaxial chemical vapor deposition (CVD) nucleation process for Bernal-stacked BLG growth on Cu using ethanol as a precursor. Results show that a carefully adjusted flow rate of ethanol can yield a uniform BLG film with a surface coverage of nearly 90% and a Bernal-stacking ratio of nearly 100% on ordinary flat Cu substrates, and its epitaxial nucleation of the second layer is mainly due to the active CH3 radicals with the presence of a monolayer-graphene-covered Cu surface. We believe that this nucleation mechanism will help clarify the formation of BLG by the epitaxial CVD process, and lead to many new strategies for scalable synthesis of graphene with more controllable structures and numbers of layers.
Starting Page	20001
Ending Page	20007
Page Count	7
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	8
Issue Number	48
Journal	Nanoscale
DOI	10.1039/c6nr04557j
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Cu Nucleation Ethanol Graphene Chemical vapor deposition
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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Epitaxial nucleation of CVD bilayer graphene on copper

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