NDLI: Highly air stable passivation of graphene based field effect devices

Content Provider	Royal Society of Chemistry (RSC)
Author	Pesquera, Amaia Centeno, Alba Elorza, Amaia Zurutuza Kurz, Heinrich Sagade, Abhay A. Schall, Daniel Otto, Martin Neumaier, Daniel
Copyright Year	2015
Abstract	The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.
Starting Page	3558
Ending Page	3564
Page Count	7
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	7
Issue Number	8
Journal	Nanoscale
DOI	10.1039/c4nr07457b
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Aluminium oxide Graphene Dopant Dielectric Hysteresis Passivation (chemistry)
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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