NDLI: Growth behavior and electrical performance of Ga-doped ZnO nanorod/p-Si heterojunction diodes prepared using a hydrothermal method

Content Provider	Royal Society of Chemistry (RSC)
Author	Joo, Jinho Lim, Jun Hyung Park, Geun Chul Hwang, Soo Min
Copyright Year	2014
Abstract	The incorporation of foreign elements into ZnO nanostructures is of significant interest for tuning the structure and optical and electrical properties in nanoscale optoelectronic devices. In this study, Ga-doped 1-D ZnO nanorods were synthesized using a hydrothermal route, in which the doping content of Ga was varied from 0% to 10%. The pn heterojunction diodes based on the n-type Ga-doped ZnO nanorod/p-type Si substrates were constructed, and the effect of the Ga doping on the morphology, chemical bonding structure, and optical properties of the ZnO nanorods was systematically investigated as well as the diode performance. With increasing Ga content, the average diameter of the ZnO nanorods was increased, whereas the amount of oxygen vacancies was reduced. In addition, the Ga-doped ZnO nanorod/p-Si diodes showed a well-defined rectifying behavior in the I–V characteristics and an improvement in the electrical conductivity (diode performance) by the Ga doping, which was attributed to the increased charge carrier (electron) concentration and the reduced defect states in the nanorods by incorporating Ga. The results suggest that Ga doping is an effective way to tailor the morphology, optical, electronic, and electrical properties of ZnO nanorods for various applications such as field-effect transistors (FETs), light-emitting diodes (LEDs), and laser diodes (LDs).
Starting Page	1840
Ending Page	1847
Page Count	8
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	6
Issue Number	3
Journal	Nanoscale
DOI	10.1039/c3nr04957d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Electrical resistivity and conductivity Optoelectronics Gallium Extrinsic semiconductor Oxygen Hydrothermal synthesis Diode Charge carrier Laser Dopant Heterojunction
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods

NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics

Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping

Growth of N-GA doped ZnO nanowires interconnected with disks over P-SI substrate and their heterojunction diode application

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Thermal Annealing Effects on the Performance of a Ga-Doped ZnO Transparent-Conductor Layer in a Light-Emitting Diode

n-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes

Growth behavior and electrical performance of Ga-doped ZnO nanorod/p-Si heterojunction diodes prepared using a hydrothermal method

Similar Documents

A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods

NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics

Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping

Growth of N-GA doped ZnO nanowires interconnected with disks over P-SI substrate and their heterojunction diode application

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Thermal Annealing Effects on the Performance of a Ga-Doped ZnO Transparent-Conductor Layer in a Light-Emitting Diode

n-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes

Growth behavior and electrical performance of Ga-doped ZnO nanorod/p-Si heterojunction diodes prepared using a hydrothermal method