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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Lee, Young Tack Jang, Byungjin Im, Seongil Jung, Hwaebong Lee, Wooyoung Jeon, Pyo Jin Kim, Jin Sung Nam, Seung Hee |
| Copyright Year | 2013 |
| Abstract | A palladium (Pd) nanogap-based thin-film has been connected to an electrically stable amorphous InGaZnO thin-film transistor, to form a hydrogen sensor demonstrating a dramatic sensing capability. As a result of the Pd connection to the transistor source, our sensor circuit greatly enhances the hydrogen-induced signal and sensing speed in the sense of output voltage, clearly resolving a minimum hydrogen content of 0.05%. When the nanogap-based Pd thin-film was connected to the transistor gate, an extremely limited hydrogen content of even less than 0.05% was visibly detected through gate voltage shifts. Our results exhibit the most promising and practical ways to sense extremely limited hydrogen contents, originating from two methods: transistor-to-Pd nanogap resistor and transistor-to-Pd nanogap capacitor coupling. |
| Starting Page | 8915 |
| Ending Page | 8920 |
| Page Count | 6 |
| File Format | HTM / HTML PDF |
| ISSN | 20403364 |
| Volume Number | 5 |
| Issue Number | 19 |
| Journal | Nanoscale |
| DOI | 10.1039/c3nr01847d |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | Thin-film transistor Hydrogen Hydrogen sensor Transistor Resistor Capacitor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology |
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