NDLI: Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

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Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

Content Provider	Europe PMC
Author	Chen, Fa-Hsyang Her, Jim-Long Shao, Yu-Hsuan Matsuda, Yasuhiro H Pan, Tung-Ming
Copyright Year	2013
Abstract	In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	8
PubMed Central reference number	PMC3584805
Issue Number	1
PubMed reference number	23294730
e-ISSN	1556276X
DOI	10.1186/1556-276x-8-18
Language	English
Publisher	Springer
Publisher Date	2013-01-08
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2013 Chen et al; licensee Springer.
Subject Keyword	Amorphous InGaZnO Thin-film transistor Er2O3 Er2TiO5
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science

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