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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Wang, Haomin Shen, Xiaonan Yu, Ting |
| Copyright Year | 2013 |
| Abstract | Electron beam exposure and metallic contact formation are commonly used processes for fabrication of graphene-based devices. We report a detailed Raman study on the influence of medium energy electron irradiation and metal atoms on defectivity and doping on monolayer and bilayer graphene. It is found that the electron beam could induce disorder into graphene layers mainly by three ways: knocking-off carbon atoms, reaction with substrate and deposition of amorphous carbon. We observe that bilayer graphene exhibits higher stability under e-beam irradiation than monolayer graphene. Our study on the formation process of metallic contacts reveals that evaporation of Ti normally cannot induce any defects into graphene while deposition of Au can introduce a large amount of damage. This work could be valuable for further development of processes in the fabrication of graphene-based devices. |
| Starting Page | 3352 |
| Ending Page | 3358 |
| Page Count | 7 |
| File Format | HTM / HTML PDF |
| ISSN | 20403364 |
| Volume Number | 5 |
| Issue Number | 8 |
| Journal | Nanoscale |
| DOI | 10.1039/c3nr33460k |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | Amorphous carbon Ti Graphene Dopant Raman Carbon |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology |
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