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Journal of Materials Chemistry C Vol -3

Journal of Materials Chemistry C Vol -2

Journal of Materials Chemistry C Vol -1

Dielectric investigation of high-k yttrium copper titanate thin films

Content Provider	Royal Society of Chemistry (RSC)
Author	Martino, Maurizio Tasco, Vittorianna Caricato, Anna Paola Rinaldi, Ross Monteduro, Anna Grazia Maruccio, Giuseppe Hazarika, Abhijit Lekshmi, I. C. Choudhury, Debraj Sarma, D. D. Ameer, Zoobia
Copyright Year	2016
Abstract	We report on the first dielectric investigation of high-k yttrium copper titanate thin films, which were demonstrated to be very promising for nanoelectronics applications. The dielectric constant of these films is found to vary from 100 down to 24 (at 100 kHz) as a function of deposition conditions, namely oxygen pressure and film thickness. The physical origin of such variation was investigated in the framework of universal dielectric response and Cole–Cole relations and by means of voltage dependence studies of the dielectric constant. Surface-related effects and charge hopping polarization processes, strictly dependent on the film microstructure, are suggested to be mainly responsible for the observed dielectric response. In particular, the bulky behaviour of thick films deposited at lower oxygen pressure evolves towards a more complex and electrically heterogeneous structure when either the thickness decreases down to 50 nm or the films are grown under high oxygen pressure.
Starting Page	1080
Ending Page	1087
Page Count	8
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	4
Issue Number	5
Journal	Journal of Materials Chemistry C
DOI	10.1039/c5tc03189c
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Dielectric Yttrium Copper Nanoelectronics Relative permittivity Oxygen Dependent and independent variables
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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