NDLI: Ultralow bandgap molecular semiconductors for ambient-stable and solution-processable ambipolar organic field-effect transistors and inverters

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Ultralow bandgap molecular semiconductors for ambient-stable and solution-processable ambipolar organic field-effect transistors and inverters

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Journal of Materials Chemistry C Vol - 5 Issue - 8

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Journal of Materials Chemistry C Vol - 5 Issue - 5

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Ultralow bandgap molecular semiconductors for ambient-stable and solution-processable ambipolar organic field-effect transistors and inverters

Content Provider	Royal Society of Chemistry (RSC)
Author	Kim, Hyekyoung Sen, Unal Usta, Hakan Choi, Donghee Ozdemir, Resul Kwon, Guhyun Ozdemir, Mehmet Kim, Choongik
Copyright Year	2017
Abstract	The design and development of novel ambipolar semiconductors is very crucial to advance various optoelectronic technologies including organic complementary (CMOS) integrated circuits. Although numerous high-performance ambipolar polymers have been realized to date, small molecules have been unable to provide high ambipolar performance in combination with ambient-stability and solution-processibility. In this study, by implementing highly π-electron deficient, ladder-type IFDK/IFDM acceptor cores with bithiophene donor units in D–A–D π-architectures, two novel small molecules, 2OD-TTIFDK and 2OD-TTIFDM, were designed, synthesized and characterized in order to achieve ultralow band-gap (1.21–1.65 eV) semiconductors with sufficiently balanced molecular energetics for ambipolarity. The HOMO/LUMO energies of the new semiconductors are found to be −5.47/−3.61 and −5.49/−4.23 eV, respectively. Bottom-gate/top-contact OFETs fabricated via solution-shearing of 2OD-TTIFDM yield perfectly ambient stable ambipolar devices with reasonably balanced electron and hole mobilities of 0.13 cm2 V−1 s−1 and 0.01 cm2 V−1 s−1, respectively with Ion/Ioff ratios of ∼103–104, and 2OD-TTIFDK-based OFETs exhibit ambipolarity under vacuum with highly balanced (μe/μh ∼ 2) electron and hole mobilities of 0.02 cm2 V−1 s−1 and 0.01 cm2 V−1 s−1, respectively with Ion/Ioff ratios of ∼105–106. Furthermore, complementary-like inverter circuits were demonstrated with the current ambipolar semiconductors resulting in high voltage gains of up to 80. Our findings clearly indicate that ambient-stability of ambipolar semiconductors is a function of molecular orbital energetics without being directly related to a bulk π-backbone structure. To the best of our knowledge, considering the processing, charge-transport and inverter characteristics, the current semiconductors stand out among the best performing ambipolar small molecules in the OFET and CMOS-like circuit literature. Our results provide an efficient approach in designing ultralow band-gap ambipolar small molecules with good solution-processibility and ambient-stability for various optoelectronic technologies, including CMOS-like integrated circuits.
Starting Page	2368
Ending Page	2379
Page Count	12
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	5
Issue Number	9
Journal	Journal of Materials Chemistry C
DOI	10.1039/c6tc05079d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Optoelectronics CMOS Electronvolt Energetics Power inverter Molecular orbital Organic field-effect transistor
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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