NDLI: A facile route to a high-quality graphene/MoS<sub>2</sub> vertical field-effect transistor with gate-modulated photocurrent response

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Journal of Materials Chemistry C Vol - 5 Issue - 8

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Journal of Materials Chemistry C Vol - 5 Issue - 5

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A facile route to a high-quality graphene/MoS₂ vertical field-effect transistor with gate-modulated photocurrent response

Content Provider	Royal Society of Chemistry (RSC)
Author	Khan, M. Farooq Seo, Yongho Eom, Jonghwa Nazir, Ghazanfar Iqbal, M. Waqas Iqbal, M. Zahir Shehzad, M. Arslan
Copyright Year	2017
Abstract	Two-dimensional layered materials, such as graphene (Gr) and molybdenum disulfide (MoS2), have become fascinating and exciting candidates for next-generation electronic device materials. Their vertical combinations have led to novel electronic and photonic devices. We fabricated vertical field-effect transistors (FETs) with h-BN/Gr/MoS2/Mo multi-heterostructures. A facile route was followed to design high-quality vertical FETs with improved performance. MoS2 was directly transferred to SiO2/h-BN/Gr without using any polymer, which produced a clean interface between Gr and MoS2. A high current ON–OFF ratio of ∼106 was demonstrated with a high current density of ∼105 A cm−2. Our results were attributed to the high-quality bottom Gr on h-BN, the top-most molybdenum metal contact, and the clean interface between Gr and MoS2. The photoresponse of vertical FETs was also investigated under deep ultraviolet irradiation. The current density and photocurrent response of these vertical devices were strongly dependent on the back-gate voltage.
Starting Page	2337
Ending Page	2343
Page Count	7
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	5
Issue Number	9
Journal	Journal of Materials Chemistry C
DOI	10.1039/c6tc04716e
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Graphene Molybdenum disulfide Polymer Electric current Molybdenum Ultraviolet Photocurrent
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment

Facile synthesis of MoS₂/graphene nanocomposite with high catalytic activity toward triiodide reduction in dye-sensitized solar cells

Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

Influence of post-annealing on the off current of MoS2 field-effect transistors

Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

Effects of interlayer coupling and electric fields on the electronic structures of graphene and MoS₂ heterobilayers

Subthreshold swing improvement in MoS₂ transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO₂/HfO₂ gate dielectric stack

Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors

Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant

A facile route to a high-quality graphene/MoS₂ vertical field-effect transistor with gate-modulated photocurrent response

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