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| Content Provider | PubMed Central |
|---|---|
| Author | Dyksik, Mateusz Motyka, Marcin Sęk, Grzegorz Misiewicz, Jan Matthias, Dallner Weih, Robert Kamp, Martin Höfling, Sven |
| Abstract | The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers’ homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth. |
| Related Links | http://dx.doi.org/10.1186/s11671-015-1104-z |
| Starting Page | 402 |
| File Format | |
| ISSN | 19317573 |
| e-ISSN | 1556276X |
| Journal | Nanoscale Research Letters |
| Volume Number | 10 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2015-12-01 |
| Access Restriction | Open |
| Rights Holder | Springer US |
| Subject Keyword | Materials Science(all) Condensed Matter Physics Research in Higher Education |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |
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