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| Content Provider | PubMed Central |
|---|---|
| Author | Chang, Kuan-chang Chang, Ting-chang Tsai, Tsung-ming Zhang, Rui Hung, Ya-chi Syu, Yong-en Chang, Yao-feng Chen, Min-chen Chu, Tian-jian Chen, Hsin-lu Pan, Chih-hung Shih, Chih-cheng Zheng, Jin-cheng Sze, Simon M. |
| Abstract | In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications. |
| Related Links | http://dx.doi.org/10.1186/s11671-015-0740-7 |
| Starting Page | 120 |
| File Format | |
| ISSN | 1556276X |
| e-ISSN | 1556276X |
| Journal | Nanoscale Research Letters |
| Volume Number | 10 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2015-12-01 |
| Access Restriction | Open |
| Rights Holder | Springer US |
| Subject Keyword | Materials Science(all) Condensed Matter Physics Research in Higher Education |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |
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