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| Content Provider | PubMed Central |
|---|---|
| Author | Wei, Yaowei Pan, Feng Zhang, Qinghua Ma, Ping |
| Abstract | Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm2. The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm2, the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems. |
| Related Links | http://dx.doi.org/10.1186/s11671-015-0731-8 |
| Starting Page | 44 |
| File Format | |
| ISSN | 1556276X |
| e-ISSN | 1556276X |
| Journal | Nanoscale Research Letters |
| Volume Number | 10 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2015-12-01 |
| Access Restriction | Open |
| Rights Holder | Springer US |
| Subject Keyword | Materials Science(all) Condensed Matter Physics Research in Higher Education |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |
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