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| Content Provider | PubMed Central |
|---|---|
| Author | Zhuo, Zeteng Sannomiya, Yuta Yuki, Kanetani Yamada, Takahiro Ohmi, Hiromasa Kakiuchi, Hiroaki Yasutake, Kiyoshi |
| Copyright Year | 2013 |
| Abstract | SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of SiOxNy films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (D it) and positive fixed charge density (Q f). After forming gas anneal, D it decreases largely with decreasing N2/O2 flow ratio from 1 to 0.01 while the change of Q f is insignificant. These results suggest that low N2/O2 flow ratio is a key parameter to achieve a low D it and relatively high Q f, which is effective for field effect passivation of n-type Si surfaces. |
| Related Links | http://dx.doi.org/10.1186/1556-276x-8-201 |
| Ending Page | 201 |
| Page Count | 1 |
| Starting Page | 201 |
| File Format | |
| ISSN | 1556276X |
| e-ISSN | 1556276X |
| Journal | Nanoscale Research Letters |
| Issue Number | 1 |
| Volume Number | 8 |
| Language | English |
| Publisher | Springer |
| Publisher Date | 2013-01-01 |
| Access Restriction | Open |
| Rights Holder | Springer |
| Subject Keyword | Materials Science(all) Condensed Matter Physics Research in Higher Education |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |
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