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| Content Provider | PubMed Central |
|---|---|
| Author | Huh, Chul Kim, Bong Kyu Park, Byoung-jun Jang, Eun-hye Kim, Sang-hyeob |
| Copyright Year | 2013 |
| Abstract | We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. |
| Related Links | http://dx.doi.org/10.1186/1556-276x-8-14 |
| Starting Page | 14 |
| File Format | |
| ISSN | 1556276X |
| e-ISSN | 1556276X |
| Journal | Nanoscale Research Letters |
| Issue Number | 1 |
| Volume Number | 8 |
| Language | English |
| Publisher | Springer |
| Publisher Date | 2013-01-01 |
| Access Restriction | Open |
| Rights Holder | Springer |
| Subject Keyword | Materials Science(all) Condensed Matter Physics Research in Higher Education |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |
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