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Stable Electron Concentration Si-doped $β-Ga_{2}O_{3}$ Films Homoepitaxial Growth by MOCVD
| Content Provider | MDPI |
|---|---|
| Author | Jiao, Teng Li, Zeming Chen, Wei Dong, Xin Li, Zhengda Diao, Zhaoti Zhang, Yuantao Zhang, Baolin |
| Copyright Year | 2021 |
| Description | To obtain high-quality n-type doped $β-Ga_{2}O_{3}$ films, silane was used as an n-type dopant to grow Si-doped $β-Ga_{2}O_{3}$ films on (100) $β-Ga_{2}O_{3}$ substrates by metal-organic chemical vapor deposition (MOCVD). The electron concentrations of the Si-doped $β-Ga_{2}O_{3}$ films obtained through experiments can be stably controlled in the range of 6.5 × $10^{16}$ $cm^{−3}$ to 2.6 × $10^{19}$ $cm^{−3}$, and the ionization energy of Si donors is about 30 meV, as determined by analysis and calculation. The full width at half maxima of the rocking curves of the (400) crystal plane of all doped films was less than 500 arcsec, thus showing high crystal quality, while the increase of the doping concentration increased the defect density in the $β-Ga_{2}O_{3}$ films, which had an adverse effect on the crystal quality and surface morphology of the films. Compared with heteroepitaxial Si-doped $β-Ga_{2}O_{3}$ films, homoepitaxial Si-doped $β-Ga_{2}O_{3}$ films exhibited higher quality, lower defect density, and more stable electron concentration, which make them more conductive for preparing $Ga_{2}O_{3}$-based power devices. |
| Starting Page | 589 |
| e-ISSN | 20796412 |
| DOI | 10.3390/coatings11050589 |
| Journal | Coatings |
| Issue Number | 5 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-05-17 |
| Access Restriction | Open |
| Subject Keyword | Coatings Nuclear Energy and Engineering Β-ga2o3 Mocvd Homoepitaxy Sem |
| Content Type | Text |
| Resource Type | Article |
