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Preparation and Properties of Crystalline IGZO Thin Films
| Content Provider | MDPI |
|---|---|
| Author | Wang, Xiao Shen, Zhihua Li, Jie Wu, Shengli |
| Copyright Year | 2021 |
| Description | IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors’ (TFTs) use in commercial products. In this paper, we prepared a c-axis crystallized IGZO thin film by Radio Frequency (RF) sputtering at 180 °C, with a 50% O2 ratio and 110 W power. XRD images show that the crystallized film has an obvious diffraction peak near 31°, and the spacing between the crystal surfaces was calculated to be ≈0.29 nm. The HRTEM map confirmed the above results. The stability of IGZO thin films was investigated by etching them with an acid solution. The crystalline IGZO films exhibited better acid corrosion resistance, and their anticorrosion performance was 74% higher than that of amorphous IGZO (a-IGZO) films, indicating the crystalline IGZO film can provide more stable performance in applications. |
| Starting Page | 134 |
| e-ISSN | 20770375 |
| DOI | 10.3390/membranes11020134 |
| Journal | Membranes |
| Issue Number | 2 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-02-14 |
| Access Restriction | Open |
| Subject Keyword | Membranes Coatings and Films Indium Gallium Zinc Oxide (igzo) Thin Film Rf Sputtering C-axis Aligned Crystal Igzo Corrosion Resistance |
| Content Type | Text |
| Resource Type | Article |
