NDLI: Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz

Content Provider	IET Digital Library
Author	Hattori, Fumiya Umegami, Hirokatsu Yamamoto, Masayoshi
Abstract	Research of power supplies for megahertz (MHz) class applications such as a semiconductor manufacturing apparatus, induction heater and wireless transfer is carried out. A liner amplifier is generally used for MHz class applications. The loss of the power devices on a liner amplifier is theoretically high. To reduce the loss, the class E and Φ2 inverters are proposed, and some of the resonant gate drive circuits (GDC) are utilised at those of the gate port. However, the control signal of the GDC becomes complicated due to the additional switches. Moreover, the switches in the GDC perform the hard-switching, and the drive loss can thus be increased. In this study, a multi-resonant gate drive circuit is proposed, and its design method is introduced. It can generate the trapezoidal wave gate-to-source voltage with the simple control signal, and zero voltage switching operation is achieved at the switches of the gate drive circuit. First, its operation is experimentally verified. Secondly, the drive loss is also compared with that of the conventional circuit. Furthermore, its operation with the class E inverter with a cascode GaN high-electron-mobility transistor (HEMT) is confirmed at the switching frequency 13.56 MHz.
Starting Page	261
Ending Page	266
Page Count	6
ISSN	1751858X
Volume Number	11
e-ISSN	17518598
Issue Number	Issue 3, May (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/11/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2016.0244
Journal	IET Circuits, Devices & Systems
Publisher Date	2016-11-29
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Cascode High-electron-mobility Transistor Class E Inverters Control Signal Drive Loss Driver Circuit Field Effect Device Gallium Compound GaN High Electron Mobility Transistors III-V SemiConductor Invertors Isolating-gate HEMT Liner Amplifier Loss Reduction Megahertz Class Application MHz Class Application Multiresonant Gate Drive Circuit Power Device Power Electronics Power Supplies Power Supply Resonant GDC Supervisory Circuit Trapezoidal Wave Gate-to-source Voltage Generation Wide Band Gap SemiConductor Zero Voltage Switching Zero Voltage Switching Operation Φ2 Inverters
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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