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| Content Provider | IET Digital Library |
|---|---|
| Author | Tang, Liyuan Zhao, Junliang Zhang, Xiaoli Dai, Haitao Sun, Xiaowei |
| Abstract | The effects of the molybdenum trioxide (MoO3) intermediate layer on the performance of all-inorganic colloidal quantum dot light-emitting diodes (QD-LEDs) with a structure of ITO/MoO3/NiO/QDs/ZnO/Al are explored. MoO3 layers with different thickness were inserted between the indium tin oxide and nickel oxide layer via a thermal evaporation process. The presented results show that an ultrathin ( ∼ 5 nm) MoO3 intermediate layer significantly enhanced the electroluminescence (EL) intensity of the QD-LED, which was more than 100 times higher than the device without the MoO3 layer. It is suggested that the EL enhancement originates from the effectively facilitated injection of holes into quantum dots through the MoO3 intermediate layer. |
| Starting Page | 421 |
| Ending Page | 424 |
| Page Count | 4 |
| Volume Number | 9 |
| e-ISSN | 17500443 |
| Issue Number | Issue 6, Jun (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/9/6 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2014.0079 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2014-06-16 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | All-inorganic Colloidal Quantum Dot Light-emitting Diode Performance Aluminium Colloids Electroluminescence Electroluminescence Intensity Hole Injection II-VI SemiConductor Indium Compound Indium Tin Oxide Layer ITO−MoO3−NiO Light Emitting Diode Molybdenum Compound Molybdenum Trioxide Intermediate Layer Effect Nickel Compound Nickel Oxide Layer Quantum Dots Thermal Evaporation Process Tin Compound Ultrathin Intermediate Layer Wide Band Gap SemiConductor Zinc Compound ZnO−Al |
| Content Type | Text |
| Resource Type | Article |
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