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The Journal of Engineering

Indium nitride humidity sensing devices with microwave resonant property

Content Provider	IET Digital Library
Author	Yang, Chih Chin
Abstract	An effective microstructure indium nitride (InN) humidity sensing (INHUSE) device has been developed after InN compound was appropriately annealed with nitrogen source compensation. An X-ray diffraction spectrum of the as-synthesised structure shows one strong peak at 30.5° corresponding to the (0002) atomic plane of the InN hexagonal compound. The InN compound of p-type is exhibited to reach an average Hall coefficient of 2.270 × 107 m2/C, which can be conjugated with the n-type substrate to construct the p–n sensing device with a resonant tunnelling property. The Raman spectrum reveals the longitudinal optical phonon mode A1(LO) (polar mode), transverse optical phonon mode A1(TO) (polar mode) and transverse optical phonon mode E1(TO) of the InN-based INHUSE device in 582, 437 and 473 cm−1, respectively. The negative differential resistance effect of the INHUSE device with an excellent peak current density in 13.2 kA/cm2 and an outstanding peak to valley current ratio of about 3.36 is exhibited. Experimental moisture examination of the INHUSE device from RH30 to 90% in accordance with the calculation of the microwave resonant property up to GHz is completed. The linear region of relative humidity measurement is from RH40 to 70% in resistance value, reached as the measured resistance value at about 31 Ω. The sensitivity of the INHUSE device is about 50 kHz/RH% for the self-resonant frequency and 2.5 MHz/RH% for the resistive cutoff frequency.
Starting Page	367
Ending Page	369
Page Count	3
Volume Number	9
e-ISSN	17500443
Issue Number	Issue 6, Jun (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/9/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2013.0679
Journal	Micro & Nano Letters
Publisher Date	2014-05-29
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Atomic Plane Current Density Galvanomagnetic And Other Magnetotransport Effect (semiConductor/Insulator) Hall Coefhcient Hall Effect Hexagonal Compound High-frequency Effect High-frequency Effect; Plasma Effect in Electronic Transport Humidity Measurement Humidity Sonsor Hygrometry II-VI And III-V SemiConductor III-V SemiConductor Indium Compound Indium Nitride Humidity Sensing Device Infrared And Raman Spectra in Inorganic Crystal InN Linear Region Longitudinal Optical Phonon Mode Microwave Resonant Property Moisture N-type Substrate Negative Differential Resistance Effect Negative Resistance P-n Sensing Device P-type Compound Phonon State And Band, Normal Mode, And Phonon Dispersion Phonons Polar Mode Raman Spectra Raman Spectrum Relative Humidity Measurement Resonant Tunnelling Resonant Tunnelling Property Sensing And Detecting Device Sensing Device And Transducers Transverse Optical Phonon Mode Wide Band Gap SemiConductor X-Ray Diffraction X-Ray Diffraction Spectrum
Content Type	Text
Resource Type	Article

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