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| Content Provider | IET Digital Library |
|---|---|
| Author | Zhu, Chao Zhou, Xingye Feng, Zhihong Wei, Zhiheng Zhao, Ziyu Zhao, Ziqi |
| Abstract | A reduced surface field (RESURF) AlGaN/GaN high-electron-mobility transistor (HEMT) with graded doping buffer (GDB) and slant back electrode (SBE) is proposed. In the GDB, the p-dopant density increases linearly both from top to bottom and right to left. The concentrated negative space charges in the lower-left corner of GDB attract the electric field lines from the channel and barrier towards the gate under OFF-state, which flats the electric field and enhances the breakdown voltage (V br). Additionally, the low p-dopant density near the top of GDB achieves the device with low ON-state resistance (R ON). The SBE flats the electric field along the channel above it and introduces a peak electric field near its edge. Simulation results show a V br of 2150 V and R ON of 7.05 Ωmm for the proposed device, compared with 1701 V and 7.73 Ωmm for the conventional back electrode RESURF HEMT (BE-RESURF HEMT) with the same gate -drain spacing. Moreover, due to the reduced depletion of 2DEG from the GDB, the proposed device shows slight increases in f T and f max (8.76 and 14.80 GHz), comparing with the conventional BE-RESURF HEMT (8.24 and 13.84 GHz). |
| Starting Page | 1282 |
| Ending Page | 1286 |
| Page Count | 5 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 12, Oct (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/12 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5421 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-10-23 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | AlGaN-GaN Aluminium Compound Back Electrode RESURF HEMT Breakdown Voltage Concentrated Negative Space Charges Conventional BE-RESURF HEMT Design And Testing Electric Field Distribution Electric Field Line Equivalent Circuit Field Effect Device Frequency 13.84 GHz Frequency 14.8 GHz Frequency 8.24 GHz Frequency 8.76 GHz Gallium Compound Gate-drain Spacing GDB Graded Doping Buffer High Electron Mobility Transistors High-voltage RESURF AlGaN-GaN High-electron-mobility Transistor III-V SemiConductor Low P-dopant Density ON-state Resistance P-dopant Density Peak Electric Field Reduced Surface Field AlGaN-GaN High-electron-mobility Transistor SBE Semiconductor Device Breakdown Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Slant Back Electrode Space Charge Two-dimensional Electron Gas Voltage 1701.0 V Voltage 2150.0 V Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
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