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| Content Provider | IET Digital Library |
|---|---|
| Author | Jena, Biswajit Dash, Sidhartha Mishra, Guru Prasad |
| Abstract | In this work, a ferroelectric dielectric based TiN-GAA MOSFET with metal work-function variations (WFVs) has been proposed. The proposed model exhibits higher I on/I off ratio and lower subthreshold swing (58 mV/decade) as compared to conventional GAA MOSFET as a result of an amalgam of both gate all around (GAA) geometry and ferroelectric effect. The investigation is further extended to different technology nodes with WFV. The WFV induced threshold voltage is considered to be a function of the ratio of average grain size to grain area concept. The model exhibits a higher probability of threshold matching as compared to previously published results and the superiority is reflected in the Pelgrom plot. Thus the model can provide insight to counter the challenges created by WFV. |
| Starting Page | 1378 |
| Ending Page | 1381 |
| Page Count | 4 |
| Volume Number | 13 |
| e-ISSN | 17500443 |
| Issue Number | Issue 10, Oct (2018) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/13/10 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5225 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2018-10-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Average Grain Size Different Technology Nodes Ferroelectric Device Ferroelectric Dielectric Based TiN-GAA MOSFET Ferroelectric Effect Ferroelectric Insulation Gallium Arsenide Grain Area Concept Grain Size Insulated Gate Field Effect Transistors Insulation Insulation And Insulating Coatings Lower Subthreshold Swing Metal Grain Work Function Variability Metal Work-function Variations MOSFET Voltage 58.0 MV WFV Work Function |
| Content Type | Text |
| Resource Type | Article |
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