NDLI: 1.4 kV Junction barrier Schottky rectifier with mixed trench structure

Content Provider	IET Digital Library
Author	kun, Xu Li Ying, Wang Zheng, Dou Wei, Xue
Abstract	Junction barrier Schottky (JBS) rectifier with mixed trench structure on 4H-SiC for improving the electrical performance is proposed. The device shows the increasing forward current density compared to the common JBS rectifier on 4H-SiC because of the larger Schottky contact area without considerable degradation of breakdown voltage. This work is solely based on simulations with Silvaco TCAD tool. The forward current density of this device with 1.5 µm Schottky region depth of the trench structure is 102 A/cm2 at the forward voltage drop of 3 V while the current density of the common JBS is 70 A/cm2. The proposed structure improves the forward voltage drop at 100 A/cm2 effectively by 23%. The reverse characteristic and output capacitance of this device are similar to common JBS rectifier. In addition, in this work the forward and reverse characteristic of the proposed device at room and high temperatures is simulated.
Starting Page	2594
Ending Page	2599
Page Count	6
ISSN	17554535
Volume Number	7
e-ISSN	17554543
Issue Number	Issue 10, Oct (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/7/10
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2013.0919
Journal	IET Power Electronics
Publisher Date	2014-06-11
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Breakdown Voltage Capacitance Current Density Electrical Performance JBS Rectifler Junction And Barrier Diode Junction Barrier Schottky Rectifier Mixed Trench Structure Power Electronics Power Supply Rectifier Schottky Barriers Schottky Diode Semiconductor Device Breakdown Semiconductor Metal InterFace Silvaco TCAD Tool Supervisory Circuit
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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