NDLI: Efficiency comparison between Si and SiC-based implementations in a high gain DC

Content Provider	IET Digital Library
Author	Masich, Antonio León Blavi, Hugo Valderrama Moncusí, Josep María Bosque Salamero, Luís Martínez
Abstract	An efficiency comparison between a boost converter implemented with silicon (Si) devices and the same converter implemented in the other three cases, that is, employing two combinations of silicon carbide (SiC) devices and a mixture of Si and SiC elements is presented. The converter has been designed for high-voltage low-power applications required by light-emitting diode (LED) lighting. The comparison is performed on an equal basis and discusses the influence on the converter efficiency of the semiconductor power devices and the passive components. The experiments are carried out in a single-stage boost converter prototype delivering a maximum output voltage of 1200 V when supplied by a 12 V battery. The measurements show that the highest efficiency is obtained when the power transistor is implemented by a normally-off junction field-effect transistor and the diode by a SiC Schottky device with a small parasitic capacitance. The implementation with the highest efficiency has been selected for supplying a light spot of 320 LEDs in series, which results in an output voltage of 956 V and an output power of 20.6 W.
Starting Page	869
Ending Page	878
Page Count	10
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 6, Jun (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2014.0591
Journal	IET Power Electronics
Publisher Date	2015-02-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Converter Efficiency DC-DC Boost Converter DC-DC Power Converter Elemental Semiconductor High-voltage Low-power Application LED Lighting Light Emitting Diode Light-emitting Diode Lighting Lighting Normally-off Junction Field-effect Transistor Parasitic Capacitance Power 20.6 W Power Electronics Power Semiconductor Device Power Supply Power Transistor Schottky Diode Semiconductor Power Device Si Device SiC SiC Device SiC Schottky Device Silicon Silicon Compound Supervisory Circuit Voltage 12 V Voltage 1200 V Voltage 956 V Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Railway traction DC–DC converter: Comparison of Si, SiC-hybrid, and full SiC versions with 1700 V power modules

AC–DC converter using V GS-multiplier circuit for LED lighting applications

Non-isolated high gain DC–DC converter with low device stress and input current ripple

Evaluation of an un-regulated input isolated DC–DC converter using WBG devices

Semi-valley switching method for buck LED driver to increase its efficiency and performance

Two-stage LED street lighting system based on a novel single-stage AC/DC converter

Interleaved high step-up zero-voltage zero-current switching boost DC–DC converter

Design of a gate driver for SiC MOSFET module for applications up to 1200 V

SiC-based high-gain DC–DC converters with fault ride-through capability

Efficiency comparison between Si and SiC-based implementations in a high gain DC–DC boost converter

Similar Documents

Railway traction DC–DC converter: Comparison of Si, SiC-hybrid, and full SiC versions with 1700 V power modules

AC–DC converter using V GS-multiplier circuit for LED lighting applications

Non-isolated high gain DC–DC converter with low device stress and input current ripple

Evaluation of an un-regulated input isolated DC–DC converter using WBG devices

Semi-valley switching method for buck LED driver to increase its efficiency and performance

Two-stage LED street lighting system based on a novel single-stage AC/DC converter

Interleaved high step-up zero-voltage zero-current switching boost DC–DC converter

Design of a gate driver for SiC MOSFET module for applications up to 1200 V

SiC-based high-gain DC–DC converters with fault ride-through capability

Efficiency comparison between Si and SiC-based implementations in a high gain DC–DC boost converter