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| Content Provider | IET Digital Library |
|---|---|
| Author | Rujas, Alejandro López, Víctor M. Bediaga, Asier Garcia Berasategi, Aloña Nieva, Txomin |
| Abstract | The influence of the silicon carbide (SiC) technology in terms of volume, weight, efficiency, and cost in a 225 kW DC–DC railway converter is detailed in this study. Three different power modules technologies have been used: ‘traditional’ silicon-based power modules, SiC-hybrid modules, and the newest full-SiC power modules available in the market. An experimental comparison of the SiC-hybrid and full-SiC modules is presented, showing their switching waveforms compared with those of the original Si modules. The highest speeds obtained by the SiC technology make the use of the traditional power module packages impossible employing Si technology. Hence, the first full-SiC modules available in the market are offered in low current ratings, requiring the complete redesign of the power converter to take advantage of the capabilities of the full-SiC modules. The railway power converter under study in this work is nowadays used to regenerate the braking energy in a DC 750 V tram with some catenary-free areas. As a final result, a full-SiC version of converter is achieved. |
| Starting Page | 3265 |
| Ending Page | 3271 |
| Page Count | 7 |
| ISSN | 17554535 |
| Volume Number | 12 |
| e-ISSN | 17554543 |
| Issue Number | Issue 12, Oct (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/iet-pel/12/12 |
| Journal | IET Power Electronics |
| Publisher Date | 2019-08-07 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Catenary-free Areas DC-DC Power Converter Elemental Semiconductor Hybrid Power Module Packaging Power 225.0 KW Power Electronics Power Supply Railway Electrification Railway Power Converter Railway Traction DC–DC Converter SiC Silicon Silicon Compound Silicon-based Power Module Supervisory Circuit Switching Converter Traction Tram Transportation Voltage 1700.0 V Voltage 750.0 V Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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