NDLI: Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology

Content Provider	IET Digital Library
Author	Bello, Habeeb Pantoli, Leonardo Ng, Herman Jalli Kissinger, Dietmar Leuzzi, Giorgio
Abstract	In this study, the authors present the design and measurement results of a voltage-controlled oscillator (VCO) that is based on a Colpitts core topology and a cascade output buffer. The circuit has a centre frequency of 176 GHz and is implemented in a 130 nm SiGe BiCMOS technology provided by IHP foundry. The VCO is a differential fundamental wave tunable oscillator that makes use of a transistor-based LC-resonator. On-wafer measurements show a tuning range of about 5% from 171 to 179.5 GHz. The circuit achieves a maximum output power of 7.3 dBm when biased at 1.6 V and 6.5 dBm if biased at 1.4 V, both with an efficiency of ∼ 6.6%. DC power consumption is 82 and 52 mW, respectively. The measured phase-noise of the VCO is − 110 dBc/Hz at 10 MHz offset. The VCO demonstrates state-of-the-art performance at these frequencies with very good performance in term of output power, efficiency linearity, phase noise and compactness; in addition, thanks to the proposed architecture it shows high integrability at the system level.
Starting Page	2490
Ending Page	2494
Page Count	5
ISSN	17518725
Volume Number	13
e-ISSN	17518733
Issue Number	Issue 14, Nov (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/13/14
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2019.0397
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2019-07-30
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	BiCMOS Integrated Circuit Bipolar MIMIC Cascade Output Buffer Colpitts Core Topology DC Power Consumption Differential Fundamental Wave Tunable Oscillator Frequency 10.0 MHz Frequency 171.0 GHz to 179.5 GHz Ge-Si Alloy IHP Foundry Integrated Circuit Design Low Phase-noise High Output Power Measured Phase-noise Microwave IC Millimetre Wave Transistors Mixed Technology Integrated Circuit MMIC Oscillator On-wafer Measurement Oscillator Phase Noise Power 52.0 MW Power 82.0 MW SiGe SiGe BiCMOS Technology Size 130 Nm Transistor-based LC-resonator VCO Voltage 1.4 V Voltage 1.6 V Voltage-controlled Oscillator
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High output power 243 GHz voltage controlled oscillator in a 130 nm SiGe BiCMOS process

Power-efficient low-noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS

A 200-GHz Inductively Tuned VCO with −7-dBm Output Power in 130-nm SiGe BiCMOS

E-band power detector with robust temperature performance in 130 nm SiGe BiCMOS

A 200-GHz Inductively Tuned VCO With $-$7-dBm Output Power in 130-nm SiGe BiCMOS

Low-power transformer-based current-reuse injection-locked frequency divider

Low-phase noise Class-C VCO with dynamic body bias

Linearly frequency-tunable and low-phase noise ring VCO using varactors with optimally-spaced bias voltages

Ka-band wideband VCO with LC filtering technique in 65-nm CMOS

Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology

Similar Documents

High output power 243 GHz voltage controlled oscillator in a 130 nm SiGe BiCMOS process

Power-efficient low-noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS

A 200-GHz Inductively Tuned VCO with −7-dBm Output Power in 130-nm SiGe BiCMOS

E-band power detector with robust temperature performance in 130 nm SiGe BiCMOS

A 200-GHz Inductively Tuned VCO With $-$7-dBm Output Power in 130-nm SiGe BiCMOS

Low-power transformer-based current-reuse injection-locked frequency divider

Low-phase noise Class-C VCO with dynamic body bias

Linearly frequency-tunable and low-phase noise ring VCO using varactors with optimally-spaced bias voltages

Ka-band wideband VCO with LC filtering technique in 65-nm CMOS

Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology