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| Content Provider | IET Digital Library |
|---|---|
| Author | Ramesh, A. Ren, F. Berger, P. R. Casal, P. Theiss, A. Gupta, S. Lee, S. C. |
| Abstract | In vivo biosensing requires stable transistor operation in high-salt concentration bodily fluids while exhibiting impermeability to mobile alkali ions that would otherwise render the metal-oxide-semiconductor (MOS) threshold voltage to drift. Metal oxide semiconductor capacitor structures using Al2O3 as the gate dielectric were soaked in a sterile physiological buffer solution (PBS) up to 24 hours and for thicknesses from 100 to 10 nm. The triangular voltage sweep technique characterised alkali ion penetration, and measured no detectable alkali ions for the Al2O3 capacitors. By contrast, the dose of alkali ions in silicon dioxide MOS capacitors steadily increased with increasing soak times in the PBS solution. |
| Starting Page | 450 |
| Ending Page | 451 |
| Page Count | 2 |
| ISSN | 00135194 |
| Volume Number | 49 |
| e-ISSN | 1350911X |
| Issue Number | Issue 7, Mar (2013) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/49/7 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2012.4283 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Al2O3 Capacitor Alkali Ion Dose Alkali Ion Penetration Biochemistry Biosensor Capacitor Detectable Alkali Ions Electrical Conductivity of Elemental Semiconductors Elemental Semiconductor Gate Dielectric High-salt Concentration Bodily Fluid Impermeability In Vivo Biosensors Metal Oxide Semiconductor Capacitor Metal-Insulator-Semiconductor Structure Metal-oxide-semiconductor Method of Nanofabrication And Processing Mobile Alkali Ions Molecular Biophysics MOS Capacitor Nanoelectronics Nanofabrication Nanometre-Scale Semiconductor Fabrication Technology PBS Solution Photonic Integration Protein Sensing Proteins Semiconductor Device Silicon Compound Silicon Dioxide MOS Capacitor SiO2 Size 100 Nm to 10 Nm Sterile Physiological Buffer Solution Threshold Voltage Transistor Transistor Operation Triangular Voltage Sweep Technique |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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