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Content Provider | IET Digital Library |
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Author | Li, Jingsi Cheng, Julian |
Abstract | The first laterally-coupled distributed feedback (DFB) laser with first-order sidewall gratings fabricated by optical interference lithography is experimentally demonstrated. The gratings were first etched into a dielectric mask on the planar top surface of an InP/AlGaInAs laser epiwafer, and then transferred to both sidewalls of a 2 µm deep ridge-waveguide structure using a novel self-aligned process. DFB ridge-waveguide lasers with a cavity length of 650 µm and width of 2.6 µm (with 300 nm gratings on both sidewalls) achieved single longitudinal mode continuous-wave operation, with a sidemode suppression ratio of 37 dB. The threshold current density is 1.7 kA/cm2 at room temperature, and the slope efficiency is 0.14 mW/mA per facet (uncoated). |
Starting Page | 764 |
Ending Page | 766 |
Page Count | 3 |
ISSN | 00135194 |
Volume Number | 49 |
e-ISSN | 1350911X |
Issue Number | Issue 12, Jun (2013) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/49/12 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2013.1520 |
Journal | Electronics Letters |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Aluminium Compound Cavity Length Current Density Deep Ridge-waveguide Structure Depth 2 Mum Design of Specific Laser System DFB Ridge-waveguide Lasers Dielectric Mask Diffraction Gratings Distributed Feedback Lasers Echelles Etching First-order Sidewall Gratings Gallium Arsenide Gratings III-V SemiConductor Indium Compound InP-AlGaInAs Laser Beam Laser Beam Characteristic And Interactions Laser Beam Interactions And Property Laser Cavity Resonator Laser Epiwafer Laser Mode Laser Resonator And Cavities Lasing Action in SemiConductor Laterally-coupled Distributed Feedback Laser Light Interference Masks Optical Fabrication Optical Interference Lithography Photolithography Planar Top Surface Quantum Well Lasers Ridge Waveguide Self-aligned Process Semiconductor Epitaxial Layer Semiconductor Laser Sidemode Suppression Ratio Single Longitudinal Mode Continuous-wave Operation Size 2.6 Mum Size 300 Nm Size 650 Mum Slope Efficiency Surface Grinding Temperature 293 K to 298 K Threshold Current Density Uncoated Facets Waveguide Lasers |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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