NDLI: Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm

Content Provider	IET Digital Library
Author	Hosoda, T. Fradet, M. Frez, C. Shterengas, L. Sander, S. Forouhar, S. Belenky, G.
Abstract	Cascade type-I quantum well GaSb-based laterally coupled distributed feedback diode lasers emitting near 2.9 µm were designed and fabricated. Second order index grating with period of 825 nm was defined by e-beam lithography and etched on both sides of 4-µm-wide shallow ridge waveguide. Anti-/neutral reflection coated 2-mm-long devices that were solder-mounted epitaxial side-up demonstrated stable single frequency operation in a wide temperature range with output power of 13 mW at 20°C. Bragg wavelength temperature tuning rate was ∼0.32 nm/K.
Starting Page	857
Ending Page	859
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 10, May (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/10
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.0115
Journal	Electronics Letters
Publisher Date	2016-04-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Antineutral Reflection Coating Antireflection Coatings Bragg Gratings Bragg Wavelength Temperature Cascade Diode Lasers Cascade Type-I Quantum Well Couplers Design of Specific Laser System Distributed Feedback Lasers E-beam Lithography Echelles Electron Beam Lithography Frequency Operation GaSb Gratings III-V SemiConductor Lasing Action in SemiConductor Laterally Coupled Lasers Optical Coatings Optical Coatings And Filter Optical Waveguide Power 13 MW Ridge Waveguide Second Order Index Grating Semiconductor Laser Semiconductor Quantum Wells Shallow Ridge Waveguide Size 2 Mm Size 4 Mum Size 825 Nm Solder-mounted Epitaxial Temperature 20 DegC Wavelength 2.9 Mum Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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