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| Content Provider | IET Digital Library |
|---|---|
| Author | Trombetta, M. Williams, N. E. Fischer, S. Gokirmak, A. Silva, H. |
| Abstract | Phase change memory cells composed of nanocrystalline Ge2Sb2Te5 with a heater diameter of 10 nm and Ge2Sb2Te5 thickness of 100 nm are studied by using two-dimensional finite element simulations with COMSOL Multiphysics. The nanocrystalline Ge2Sb2Te5 is emulated by using a mesh-based model incorporating crystalline grains of random size and location embedded in the amorphous media. The material parameters are modelled with temperature dependency from 300 to 1000 K, including electrical resistivity, thermal conductivity, electric field breakdown and Seebeck coefficient. This model is shown to capture the cycle-to-cycle and device-to-device variability in phase change memory cells. |
| Starting Page | 100 |
| Ending Page | 101 |
| Page Count | 2 |
| ISSN | 00135194 |
| Volume Number | 50 |
| e-ISSN | 1350911X |
| Issue Number | Issue 2, Jan (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/50/2 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2013.2253 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Amorphous And Glassy Semiconductors Amorphous Media Antimony Compounds Chalcogenide Glasses COMSOL Multiphysics Crystalline Grains Cycle-to-cycle Variability Device-to-device Variability Electric Breakdown Electric Field Breakdown Electrical Conductivity of Amorphous And Glassy Semiconductors Electrical Resistivity Engineering Material Science Finite Element Analysis Finite Element Electrothermal Modelling Ge2Sb2Te5 Germanium Compound Glasses Material Parameter Memory Circuit Mesh Generation Mesh-based Crystallinity Approach Nanocrystalline Phase Change Element Nanostructured Material Nonelectronic Thermal Conduction And Heat-pulse Propagation in Nonmetallic Solids Phase Change Material Phase Change Memories Phase Change Memory Cell Random Size Seebeck Coefficient Seebeck Effect Size 10 Nm Size 100 Nm Temperature 300 K to 1000 K Thermal Conductivity Thermoelectric Effect (semiConductor/Insulator) Two-dimensional Finite Element Simulations |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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