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Content Provider | IET Digital Library |
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Author | Newburgh, G. A. Dubinskii, M. |
Abstract | A thermally advanced, Nd:YVO4 amplifier at 1064 nm based on an 800 µm-thick Nd:YVO4 gain layer bonded to a silicon carbide (SiC) prism is demonstrated. The amplifier was tested in the ‘master oscillator–power amplifier’ configuration, where both the seed source and the amplifier were operated in a quasi-continuous-wave regime. The hetero-composite Nd:YVO4/SiC gain element pumped by an 808 nm laser diode bar stack amplified the seed power in a range of 1–55 W with a gain of 4–2.6, respectively. The temperature profile of the gain element measured by a thermal camera indicated the maximum observed temperature excursion at pump saturation intensity to be only 27°C. |
Starting Page | 1152 |
Ending Page | 1153 |
Page Count | 2 |
ISSN | 00135194 |
Volume Number | 50 |
e-ISSN | 1350911X |
Issue Number | Issue 16, Jul (2014) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/50/16 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2014.1900 |
Journal | Electronics Letters |
Publisher Date | 2014-07-24 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Advanced Thermal Management Design of Specific Laser System Heterocomposite Nd:YVO4/SiC Thin Disk Amplifier Laser Diode Bar Stack Pumping Lasing Action in Other Solids Master Oscillator-power Amplifier Configuration Neodymium Optical Pumping Optical Saturation Optical Saturation And Related Effect Optical Transient Phenomena Power 1 W to 55 W Pump Saturation Intensity Quasicontinuous Wave Regime Self-induced Transparency SiC Silicon Carbide Prism Silicon Compound Size 800 Mum Solid Lasers Temperature 27 DegC Temperature Profile Thermal Camera Thermal Management (packaging) Wavelength 1064 Nm Wavelength 808 Nm Yttrium Compound YVO4:Nd-SiC |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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