NDLI: 13 mW 80 GHz down-conversion mixer with 1.5 dB gain and 49.2 dB LO

Content Provider	IET Digital Library
Author	Lin, Y. S. Li, G. H.
Abstract	An 80 GHz double-balanced down-conversion mixer for automotive radars using standard 90 nm complementary metal oxide semiconductor (CMOS) technology is reported. The mixer comprises a double-balanced Gilbert cell with inductive source-degeneration radio-frequency (RF) transconductance stage for wideband RF-port input impedance matching and conversion gain (CG) enhancement, a Marchand balun for converting the single RF input signal to differential signal, a Marchand balun for converting the single local oscillator (LO) input signal to differential signal and a baseband amplifier. The mixer consumes 13 mW and achieves excellent RF-port input reflection coefficient of −13.1 ∼ −19.4 dB and LO-port input reflection coefficient of −9.1 ∼ −11.8 dB for frequencies in the range 75–85 GHz. In addition, for frequencies of 75–85 GHz, the mixer achieves CG of −1 ∼1.5 dB, LO–RF isolation of 43.5–49.2 dB and LO–intermediate frequency (IF) isolation of 56.5–64.5 dB, one of the best CG and port-to-port isolation results ever reported for a CMOS down-conversion mixer with operation frequency about 80 GHz.
Starting Page	1449
Ending Page	1451
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 20, Sep (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/20
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.1263
Journal	Electronics Letters
Publisher Date	2014-09-12
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Automotive Radar Baluns Baseband Amplifier CG Enhancement CMOS Integrated Circuit Conversion Gain Enhancement Demodulator Differential Signal Discriminators And Mixers Double-balanced Down-conversion Mixer Double-balanced Gilbert Cell Frequency 75 GHz to 85 GHz Gain -1 DB to 1.5 DB Gain -13.1 DB to -19.4 DB Gain -9.1 DB to -11.8 DB Gain 1.5 DB Gain 43.5 DB to 49.2 DB Gain 56.5 DB to 64.5 DB Impedance Matching Inductive Source-degeneration Radiofrequency Transconductance Stage LO-RF Isolation Local Oscillator Marchand Balun Microwave IC Millimetre Wave Amplifiers Millimetre Wave Integrated Circuit Millimetre Wave Mixers Millimetre Wave Oscillator Modulator Oscillator Power 13 MW RF-port Input Reflection Coefficient Road Vehicle Radar Single RF Input Signal Size 90 Nm Standard CMOS Technology Wideband RF-port Input Impedance Matching
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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