NDLI: GaAs quantum well-dots solar cells with spectral response extended to 1100 nm

Content Provider	IET Digital Library
Author	Mintairov, S. A. Kalyuzhnyy, N. A. Maximov, M. V. Nadtochiy, A. M. Rouvimov, S. Zhukov, A. E.
Abstract	Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers alternated with GaAs spacers can be inserted in an i-region of the GaAs p–i–n junction without impairing its crystal quality and quantum efficiency in spectral interval of GaAs absorption. The QWD layers are responsible for appearance of a longer wave spectral response (900–1100 nm). A photocurrent increment as high as 4.6 (5.2) mA/cm2 for terrestrial (space) spectrum is demonstrated.
Starting Page	1602
Ending Page	1604
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 20, Oct (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/20
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.2481
Journal	Electronics Letters
Publisher Date	2015-09-24
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Absorption GaAs Gallium Arsenide Hybrid Quantum Well Dots III-V SemiConductor Indium Compound InGaAs Nanostructure Nanostructured Material Photoconductivity Photocurrent Photoelectric Conversion Photosensitivity Spectrum Expansion Pin Junction Quantum Well Device Quantum Well Dot Solar Cell QWD Multilayer Media Semiconductor Device Semiconductor Quantum Dots Semiconductor Quantum Wells Solar Cell And Array Spectral Interval Spectral Response Terrestrial Spectrum Wavelength 900 Nm to 1100 Nm Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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