NDLI: High mobility transparent flexible nickel-doped zinc oxide thin-film transistors with small subthreshold swing

Content Provider	IET Digital Library
Author	Huang, Lingling Han, Dedong Zhang, Yi Shi, Pan Yu, Wen Cui, Guolong Cong, Yingying Dong, Junchen Zhang, Shengdong Zhang, Xing Wang, Yi
Abstract	High-mobility nickel (Ni)-doped zinc oxide thin-film transistors (NZO TFTs) have been successfully fabricated on flexible transparent plastic substrates at a low temperature. The devices all exhibited good electrical properties with small subthreshold swing (SS) and high saturation mobility fabricated under different sputtering pressure (0.4, 0.8, 1.2, 1.6 Pa) during channel deposition by RF magnetron sputtering were found. The electrical properties of NZO TFTs reached the best when the sputtering pressure was 1.6 Pa, with an SS of 89 mV/decade, a saturation mobility of 172 cm2·V−1·s−1, a drain current on/off ratio of 108, and a positive threshold voltage of 2.36 V. The results show that Ni-doped ZnO is a promising candidate for flexible fully transparent displays.
Starting Page	1595
Ending Page	1596
Page Count	2
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 20, Oct (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/20
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.2041
Journal	Electronics Letters
Publisher Date	2015-08-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Channel Deposition Drain Current Eengineering Materials Science Electrical Property Field Effect Device Flexible Displays Flexible Fully Transparent Display Flexible Transparent Plastic Substrate High Electron Mobility Transistors High Mobility Transparent Flexible Nickel Doped Zinc Oxide Thin-film Transistor Nickel NZO TFT Plastics Polymers And Plastics Positive Threshold Voltage Pressure 0.4 Pa Pressure 0.8 Pa Pressure 1.2 Pa Pressure 1.6 Pa RF Magnetron Sputtering Saturation Mobility Semiconductor Doping Small Subthreshold Swing Sputtering Sputtering Pressure Substrate-Down Configuration Thin Film Transistors Voltage 2.36 V Zinc Compound ZnO:Ni
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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