NDLI: InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

Content Provider	IET Digital Library
Author	Yoshikawa, H. Kwoen, J. Doe, T. Izumi, M. Iwamoto, S. Arakawa, Y.
Abstract	Quantum dot infrared photodetectors (QDIPs) are receiving attention as next generation infrared photodetectors that offer high-sensitivity and high-temperature operation. The realisation of QDIPs on silicon (Si) substrates offer further great advantages in terms of cost reduction and higher-resolution focal plane arrays. Indium arsenide/gallium arsenide QDIPs grown directly on on-axis Si (100) substrates are demonstrated. These are expected to further reduce fabrication costs by utilising both the monolithic integration of QDIPs with Si readout integrated circuits and also the bare substrate cost (compared with offcut Si substrates). In the device, the peak detectivity at a temperature of 32 K is measured to be 5.8 × 107 cm Hz1/2/W of 6.2 μm at a bias 0.6 V, with a corresponding responsivity of 27 mA/W. This result indicates that QD structures directly grown on on-axis Si substrates are very promising for the realisation of high-performance QDIPs with low fabrication cost.
Starting Page	1395
Ending Page	1397
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 24, Nov (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/24
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.7118
Journal	Electronics Letters
Publisher Date	2018-10-31
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bolometers Detection of Radiation Focal Plane Gallium Arsenide High-temperature Operation Higher-resolution Focal Plane Array II-VI And III-V SemiConductor III-V SemiConductor InAs-GaAs Indium Arsenide-gallium Arsenide QDIPs Indium Compound Infrared Detector Low-Dimensional Structure: Growth, Structure And Nonelectronic Property On-axis Si Substrates PhotoDetector Photoelectric Cell Quantum Dot Infrared PhotoDetector Quantum Well Device Quantum Wells And Related Structure Semiconductor Growth Semiconductor Quantum Dots Semiconductor Superlattices Si Readout Integrated Circuit Silicon Substrates Submillimetre Wave Detection Temperature 32.0 K Voltage 0.6 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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