NDLI: Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory

Content Provider	IET Digital Library
Author	Son, Y. Kang, M.
Abstract	Data retention characteristics are investigated in charge trapping flash memory. The physical root cause of the non-Arrhenius behaviour, which is the general retention characteristic in charge trap flash memories, is numerical modelling that the charge loss mechanism is associated with the trap energy level in the charge storage area. For expression of the charge loss in the relatively shallow traps, multiphonon emission model is adopted. Finally, the ratio of the relatively shallow traps to middle and deep level traps is extracted in a sample data.
Starting Page	434
Ending Page	435
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 6, Mar (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.4427
Journal	Electronics Letters
Publisher Date	2016-02-19
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Charge Loss Mechanism Charge Storage Area Charge Trap Flash Memory Charge Trapping Flash Memory Data Retention Characteristic Electron Traps Flash Memories Hole Traps Memory Circuit Multiphonon Emission Theory NonArrhenius Behaviour Phonons Semiconductor Storage Trap Energy Level
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory