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| Content Provider | IET Digital Library |
|---|---|
| Author | Zhang, Yue |
| Abstract | Short-wave infrared photodetectors with a p-charge layer and double barrier structure are designed and fabricated by molecular beam epitaxy. The current intensity is lowered by three orders of magnitude compared with the detector without the p-charge layer. The tested responsivity of the detector is 485 A/W at 0.31 V, when the power of the incident light is 10 nW. By adding the p-charge layer, the signal-to-noise ratio of the detector is promoted by 30 times, which reaches 1712 at 0.3 V, when the power of the incident light is 1 nW. |
| Starting Page | 859 |
| Ending Page | 861 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 52 |
| e-ISSN | 1350911X |
| Issue Number | Issue 10, May (2016) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/52/10 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2016.0555 |
| Journal | Electronics Letters |
| Publisher Date | 2016-04-22 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Bolometers Current Intensity Detection of Radiation Double Barrier Structure Infrared Detector Molecular Beam Epitaxial Growth Molecular Beam Epitaxy P-charge Layer PhotoDetector Photoelectric Cell Responsivity Short-wave Infrared Photodetector Signal to Noise Ratio Submillimetre Wave Detection Vacuum Deposition |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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